Search results for "Power diode"

showing 3 items of 3 documents

Optimisation of refractory coatings realised with cored wire addition using a high-power diode laser

2005

Laser; Cladding; Refractory alloys; Factorial experiments; International audience; The objective or our research was to obtain refractory alloys using the high-power diode laser (HPDL) coating technique. After optimisation using factorial experiments, two different cladding regimes were clearly distinguished. It was also shown that a very narrow transition zone exists between the two regimes, and, inside this zone, clad layers having a satisfactory compromise between the response functions (surface aspect and cavity presence) were obtained. The main objective of our study, namely, the control of the operating parameters (geometrical and kinematical) to realise adequate coatings, without cav…

0209 industrial biotechnologyMaterials science[ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]02 engineering and technologyWeldingengineering.materiallaw.invention020901 industrial engineering & automationCoatinglawMaterials ChemistryComposite materialDiodeHigh power lasersSurfaces and InterfacesGeneral ChemistryFactorial experiment021001 nanoscience & nanotechnologyCondensed Matter PhysicsLaserCladding (fiber optics)Surfaces Coatings and FilmsPower diodeengineering[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]0210 nano-technology
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Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

2018

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. Peer reviewed

mallintaminenMaterials sciencePOWER DIODESSchottky diodesSINGLE-EVENT BURNOUT114 Physical sciences01 natural sciencesIonpower semiconductor devicesBARRIER DIODESTHERMAL-DAMAGEchemistry.chemical_compoundMolecular dynamicspuolijohteetsilicon carbide0103 physical sciencesSilicon carbideIrradiationElectrical and Electronic EngineeringSafety Risk Reliability and Quality010302 applied physicsta114ta213ionit010308 nuclear & particles physicsbusiness.industryionisoiva säteilyINORGANIC INSULATORSSchottky diodemodelingHeavy ion irradiationIRRADIATIONElectronic Optical and Magnetic MaterialschemistryionsOptoelectronicsDegradation (geology)Heavy ionbusinession radiation effectsIEEE Transactions on Device and Materials Reliability
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Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

2018

Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon …

silicon carbidesingle-event burnoutthermal coefficients of silicon carbidepower diodessingle event effectsheavy ionsjunction barrier schottky (JBS) diode
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